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          Semiconductor Crystal Microdefect Inspection System

              By means of light scattering tomography and PL methods, Milsa detects micro-defects such as dislocation, laminating defect, deposition, residual distortion and irregularity of doping in oxide crystals such as Si, GaAs, CdTd, ZnSe.


Supersensitive Defect diameter
       20nm and below

High resolution Detected defect thickness
mm and below
Wide field Scanned range
      5mm and above

Dislocations in In doped GaAs

Entangled dislocation loops observed by LST

Entangled dislocation loops observed by PLT