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次世代ULSIプロセスに対応した高速マスクパターン演算


          Semiconductor



          Semiconductor Crystal Microdefect Inspection System





              By means of light scattering tomography and PL methods, Milsa detects micro-defects such as dislocation, laminating defect, deposition, residual distortion and irregularity of doping in oxide crystals such as Si, GaAs, CdTd, ZnSe.







                  Features


Supersensitive Defect diameter
       20nm and below

High resolution Detected defect thickness
      5
mm and below
Wide field Scanned range
      5mm and above




Dislocations in In doped GaAs


Entangled dislocation loops observed by LST


Entangled dislocation loops observed by PLT